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R6010ANX

R6010ANX

MOSFET N-CH 600V 10A TO220FM

R6010ANX

R6010ANX

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Part No :

R6010ANX

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 10A TO220FM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10512 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
R6010ANX PDF
Type Description
Series:-
Package:Bulk
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FM
Package / Case:TO-220-3 Full Pack
R6010ANX is available at GangBo-ic.com, Please review product page below for detailed information, including R6010ANX price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6010ANX to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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