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R6010ANX

R6010ANX

MOSFET N-CH 600V 10A TO220FM

R6010ANX

R6010ANX

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Part No :

R6010ANX

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 10A TO220FM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10512 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
R6010ANX PDF
Type Description
Series:-
Package:Bulk
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FM
Package / Case:TO-220-3 Full Pack
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