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FQPF20N06

FQPF20N06

POWER FIELD-EFFECT TRANSISTOR, 1

FQPF20N06

FQPF20N06

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Part No :

FQPF20N06

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10687 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
FQPF20N06 PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 25 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF20N06 is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF20N06 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF20N06 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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