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SI4477DY-T1-GE3

SI4477DY-T1-GE3

MOSFET P-CH 20V 26.6A 8SO

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SI4477DY-T1-GE3

SI4477DY-T1-GE3

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Part No :

SI4477DY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 26.6A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
684468 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
SI4477DY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:26.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:6.2mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 6.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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