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SI4425FDY-T1-GE3

SI4425FDY-T1-GE3

MOSFET P-CH 30V 12.7/18.3A 8SOIC

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SI4425FDY-T1-GE3

SI4425FDY-T1-GE3

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Part No :

SI4425FDY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 30V 12.7/18.3A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11453 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12.7A (Ta), 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds:1620 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.3W (Ta), 4.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
SI4425FDY-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI4425FDY-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI4425FDY-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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