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IRLR3410PBF

IRLR3410PBF

HEXFET POWER MOSFET

IRLR3410PBF

IRLR3410PBF

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Part No :

IRLR3410PBF

Manufacturer
Rochester Electronics
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
204420 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 31 - Jan 04 2024
PDF
IRLR3410PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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