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SIR882BDP-T1-RE3

SIR882BDP-T1-RE3

MOSFET N-CH 100V 16.5/67.5A PPAK

SIR882BDP-T1-RE3

SIR882BDP-T1-RE3

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Part No :

SIR882BDP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 16.5/67.5A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15991 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:16.5A (Ta), 67.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3762 pF @ 50 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 83.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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