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IAUT165N08S5N029ATMA2

IAUT165N08S5N029ATMA2

MOSFET N-CH 80V 165A 8HSOF

IAUT165N08S5N029ATMA2

IAUT165N08S5N029ATMA2

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Part No :

IAUT165N08S5N029ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 165A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11982 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
IAUT165N08S5N029ATMA2 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:165A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6370 pF @ 40 V
FET Feature:-
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
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