MOSFET N-CH 30V 48A 8VSON
Type | Description |
---|---|
Series: | NexFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.8mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.2 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1272 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI4431CDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 9A 8SO |
|
IRFP048RPBFVishay / Siliconix |
MOSFET N-CH 60V 70A TO247-3 |
|
RM17N800TIRectron USA |
MOSFET N-CHANNEL 800V 17A TO220F |
|
IRF620PBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 5.2A TO220AB |
|
SISS64DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK1212-8S |
|
NTE464NTE Electronics, Inc. |
MOSFET-P CHANNEL AMP/SW |
|
IXTX5N250Wickmann / Littelfuse |
MOSFET N-CH 2500V 5A PLUS247-3 |
|
NTD23N03RT4Rochester Electronics |
MOSFET N-CH 25V 3.8A/17.1A DPAK |
|
TN0604N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3 |
|
AON7702Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13.5A/36A 8DFN |
|
BUK9516-75B,127Rochester Electronics |
PFET, 67A I(D), 75V, 0.018OHM, 1 |
|
IXTK17N120LWickmann / Littelfuse |
MOSFET N-CH 1200V 17A TO264 |
|
FDD7N20TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 5A D-PAK |