MOSFET N-CH 30V 13.5A/36A 8DFN
Type | Description |
---|---|
Series: | SRFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 13.5A (Ta), 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 10mOhm @ 13.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 48 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4250 pF @ 15 V |
FET Feature: | Schottky Diode (Body) |
Power Dissipation (Max): | 3.1W (Ta), 23W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (3x3) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK9516-75B,127Rochester Electronics |
PFET, 67A I(D), 75V, 0.018OHM, 1 |
|
IXTK17N120LWickmann / Littelfuse |
MOSFET N-CH 1200V 17A TO264 |
|
FDD7N20TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 5A D-PAK |
|
SQJQ402E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
|
FDG361NRochester Electronics |
MOSFET N-CH 100V 600MA SC88 |
|
SI7434ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 250V 3.7A/12.3A PPAK |
|
FDP10N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10A TO220-3 |
|
IXFH170N10PWickmann / Littelfuse |
MOSFET N-CH 100V 170A TO247AD |
|
IRF5803TRPBFIR (Infineon Technologies) |
MOSFET P-CH 40V 3.4A MICRO6 |
|
FQD6N25TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 4.4A DPAK |
|
MCAC80N10Y-TPMicro Commercial Components (MCC) |
MOSFET N-CH 100V 80A DFN5060 |
|
UPA1807GR-9JG-E1-ARochester Electronics |
MOSFET N-CH 30V 12A 8TSSOP |
|
RD3G500GNTLROHM Semiconductor |
MOSFET N-CH 40V 50A TO252 |