MOSFET N-CH 800V 1.9A TO251-3
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 1.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.8Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 120µA |
Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 290 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM3J351R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 3.5A SOT-23F |
|
IRFAF42Rochester Electronics |
MOSFET N-CH 500V 7A TO204AE |
|
DMT6015LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 9.2A 8SO |
|
CMS32P03V8-HFComchip Technology |
MOSFET P-CH 30V 7.7A/32A 8PDFN |
|
IPS65R650CEAKMA1Rochester Electronics |
MOSFET N-CH 700V 10.1A TO251-3 |
|
CSD17551Q5ATexas Instruments |
MOSFET N-CH 30V 48A 8VSON |
|
SI4431CDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 9A 8SO |
|
IRFP048RPBFVishay / Siliconix |
MOSFET N-CH 60V 70A TO247-3 |
|
RM17N800TIRectron USA |
MOSFET N-CHANNEL 800V 17A TO220F |
|
IRF620PBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 5.2A TO220AB |
|
SISS64DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK1212-8S |
|
NTE464NTE Electronics, Inc. |
MOSFET-P CHANNEL AMP/SW |
|
IXTX5N250Wickmann / Littelfuse |
MOSFET N-CH 2500V 5A PLUS247-3 |