MOSFET N-CH 30V 36A/100A 8PQFN
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.99mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 209 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 14965 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 104W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-PQFN (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPB65R095C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 24A TO263-3 |
|
DMN3730U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 750MA SOT23 |
|
NTD4809NA-35GRochester Electronics |
MOSFET N-CH 30V 9.6A/58A IPAK |
|
RFD14N05SM_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHF16N50C-E3Vishay / Siliconix |
MOSFET N-CH 500V 16A TO220 |
|
PHT6N06LT,135Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
FQAF16N25CRochester Electronics |
MOSFET N-CH 250V 11.4A TO3PF |
|
IRF7807ZPBFRochester Electronics |
MOSFET N-CH 30V 11A 8SO |
|
IAUC41N06S5L100ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 41A TDSON-8-33 |
|
IXFK170N20TWickmann / Littelfuse |
MOSFET N-CH 200V 170A TO264AA |
|
RUR020N02TLROHM Semiconductor |
MOSFET N-CH 20V 2A TSMT3 |
|
DMN3016LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10.8A PWRDI5060 |
|
IRF3709ZSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 87A D2PAK |