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PHT6N06LT,135

PHT6N06LT,135

POWER FIELD-EFFECT TRANSISTOR, 2

PHT6N06LT,135

PHT6N06LT,135

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Part No :

PHT6N06LT,135

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
427066 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 03 - Feb 07 2025
Type Description
Series:TrenchMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:150mOhm @ 5A, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 5 V
Vgs (Max):±13V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta), 8.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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