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SQW61N65EF-GE3

SQW61N65EF-GE3

MOSFET N-CH 650V 62A TO247AD

MAT10260

MAT10260

DIE, ATTENUATOR, 26DB

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SQW61N65EF-GE3

SQW61N65EF-GE3

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Part No :

SQW61N65EF-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 650V 62A TO247AD
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10480 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
Type Description
Series:Automotive, AEC-Q101, E
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:52mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:344 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:7379 pF @ 100 V
FET Feature:-
Power Dissipation (Max):625W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD
Package / Case:TO-247-3
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