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NDS356P

NDS356P

MOSFET P-CH 20V 1.1A SUPERSOT3

NDS356P

NDS356P

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Part No :

NDS356P

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 20V 1.1A SUPERSOT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10838 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
NDS356P PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:210mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:180 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT-3
Package / Case:TO-236-3, SC-59, SOT-23-3
NDS356P is available at GangBo-ic.com, Please review product page below for detailed information, including NDS356P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NDS356P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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