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IRFBC30STRLPBF

IRFBC30STRLPBF

MOSFET N-CH 600V 3.6A D2PAK

IRFBC30STRLPBF

IRFBC30STRLPBF

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Part No :

IRFBC30STRLPBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 3.6A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10728 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 03 - Feb 07 2025
PDF
IRFBC30STRLPBF PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFBC30STRLPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFBC30STRLPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFBC30STRLPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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