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EPC2016C

EPC2016C

GANFET N-CH 100V 18A DIE

FXUYP7E7EXAF074

FXUYP7E7EXAF074

OM3 24-FIBER INDOOR SMALL DIAMET

EPC2016C

EPC2016C

Image is for reference, please contact us to get the real picture

Part No :

EPC2016C

Manufacturer
EPC
Description
GANFET N-CH 100V 18A DIE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
134646 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
EPC2016C PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id:2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 5 V
Vgs (Max):+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 50 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die
EPC2016C is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2016C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2016C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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