MOSFET N-CH 700V 6A TO247-3
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 700 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 660mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: | 22 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 615 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 62.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IRFD320PBFVishay / Siliconix |
MOSFET N-CH 400V 490MA 4DIP |
![]() |
IXFN26N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 23A SOT-227B |
![]() |
SIHLL110TR-GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
![]() |
TSM60NB190CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 18A ITO220AB |
![]() |
RQ6A045APTCRROHM Semiconductor |
MOSFET P-CH 12V 4.5A TSMT6 |
![]() |
PMCM4401VPE084Rochester Electronics |
PMCM4401 SMALL SIGNAL FET |
![]() |
IPB180N04S401ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
![]() |
VMO1200-01FWickmann / Littelfuse |
MOSFET N-CH 100V 1220A Y3-LI |
![]() |
FCH041N60F-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 76A TO247-3 |
![]() |
EFC4612R-S-TRSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 6A EFCP |
![]() |
IRL6342TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 9.9A 8SO |
![]() |
RZM002P02T2LROHM Semiconductor |
MOSFET P-CH 20V 200MA VMT3 |
![]() |
NTD78N03R-001Rochester Electronics |
N-CHANNEL POWER MOSFET |