CRYSTAL 38.4000MHZ 12PF SMD
MOSFET N-CH 600V 4A TO220FP
Type | Description |
---|---|
Series: | SuperMESH™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 26 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 510 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 25W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FP |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VN2224N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 540MA TO92-3 |
|
DMP3026SFDE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.4A 6UDFN |
|
IRFSL7762PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 85A TO262 |
|
IRFR9024TRRPBFVishay / Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
|
SISA01DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 22.4A/60A PPAK |
|
PMZB290UN,315Nexperia |
MOSFET N-CH 20V 1A DFN1006B-3 |
|
SIS782DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK1212-8 |
|
AUIRFSL6535Rochester Electronics |
MOSFET N-CH 300V 19A TO262-3-901 |
|
RQ3E120ATTBROHM Semiconductor |
MOSFET P-CH 30V 12A 8HSMT |
|
IPW65R280C6FKSA1Rochester Electronics |
MOSFET N-CH 650V 13.8A TO247-3 |
|
STP18N55M5STMicroelectronics |
MOSFET N-CH 550V 16A TO220AB |
|
PSMN4R1-30YLC,115Rochester Electronics |
MOSFET N-CH 30V 92A LFPAK56 |
|
APT34M60SRoving Networks / Microchip Technology |
MOSFET N-CH 600V 36A D3PAK |