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IPW65R280C6FKSA1

IPW65R280C6FKSA1

MOSFET N-CH 650V 13.8A TO247-3

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IPW65R280C6FKSA1

IPW65R280C6FKSA1

Image is for reference, please contact us to get the real picture

Part No :

IPW65R280C6FKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 13.8A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15883 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPW65R280C6FKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 100 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
IPW65R280C6FKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW65R280C6FKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW65R280C6FKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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