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SIHG23N60E-GE3

SIHG23N60E-GE3

MOSFET N-CH 600V 23A TO247AC

SIHG23N60E-GE3

SIHG23N60E-GE3

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Part No :

SIHG23N60E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 23A TO247AC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10263 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SIHG23N60E-GE3 PDF
Type Description
Series:E
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:158mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2418 pF @ 100 V
FET Feature:-
Power Dissipation (Max):227W (Tc)
Operating Temperature:-55°C ~ 150°C (TA)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
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