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FQA10N60C

FQA10N60C

MOSFET N-CH 600V 10A TO3P

FQA10N60C

FQA10N60C

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Part No :

FQA10N60C

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 10A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
44527 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FQA10N60C PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:730mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2.04 pF @ 25 V
FET Feature:-
Power Dissipation (Max):192W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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