MDMA LOCATOR
MOSFET N-CH 650V 8.5A TO220AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 930mOhm @ 5.1A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 48 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1417 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 167W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI4455DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 2A 8SO |
|
AUIRF9Z34N-INFRochester Electronics |
AUTOMOTIVE HEXFET P CHANNEL |
|
CSD17507Q5ATexas Instruments |
MOSFET N-CH 30V 13A/65A 8VSON |
|
HUF76129D3SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN1R7-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 100A LFPAK56 |
|
PSMN020-30MLCXRochester Electronics |
TRANSISTOR >30MHZ |
|
N0602N-S19-AYRenesas Electronics America |
MOSFET N-CH 60V 100A TO220-3 |
|
DMN2300U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.24A SOT23 |
|
HUF75545P3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN3009LFVW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 60A POWERDI3333 |
|
SIHG23N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 23A TO247AC |
|
FCA47N60-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 47A TO3PN |
|
TK4R3E06PL,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 80A TO220 |