MOSFET P-CH 55V 11A DPAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 175mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 19 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 38W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252AA) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SQJ460AEP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 60V 58A PPAK SO-8 |
|
HUF76609D3Rochester Electronics |
MOSFET N-CH 100V 10A IPAK |
|
PMPB85ENEA115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB032N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 166A TO263-7 |
|
BSD214SNL6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SPW35N60C3Rochester Electronics |
SPW35N60 - 600V COOLMOS N-CHANNE |
|
IRF614PBFVishay / Siliconix |
MOSFET N-CH 250V 2.7A TO220AB |
|
TK2Q60D(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 2A PW-MOLD2 |
|
IRFL014TRPBFVishay / Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
|
TJ200F04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 200A TO220SM |
|
SI4638DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 22.4A 8SO |
|
FDP75N08ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 75A TO220-3 |
|
RSH065N06GZETBROHM Semiconductor |
MOSFET N-CH 60V 6.5A 8SOP |