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FDD4N60NZ

FDD4N60NZ

MOSFET N-CH 600V 3.4A DPAK

FDD4N60NZ

FDD4N60NZ

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Part No :

FDD4N60NZ

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 3.4A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14882 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 15 - Mar 19 2025
PDF
FDD4N60NZ PDF
Type Description
Series:UniFET-II™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 25 V
FET Feature:-
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FDD4N60NZ is available at GangBo-ic.com, Please review product page below for detailed information, including FDD4N60NZ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDD4N60NZ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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