MOSFET N-CH 500V 5.4A TO220
Type | Description |
---|---|
Series: | CoolMOS™ CE |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 13V |
Rds On (Max) @ Id, Vgs: | 500mOhm @ 2.3A, 13V |
Vgs(th) (Max) @ Id: | 3.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: | 18.7 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 433 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 28W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 Full Pack |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RS3G160ATTB1ROHM Semiconductor |
PCH -40V -16A POWER MOSFET - RS3 |
|
NTD4863N-1GRochester Electronics |
MOSFET N-CH 25V 9.2A/49A IPAK |
|
MGSF3455VT1Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
IRF7946TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 90A DIRECTFET MX |
|
APT1201R2BLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 12A TO247 |
|
SI7112DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11.3A PPAK1212-8 |
|
2N7002H6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 60V 300MA SOT23-3 |
|
IPD50R800CEAUMA1IR (Infineon Technologies) |
CONSUMER |
|
PMV50XP215Rochester Electronics |
P-CHANNEL MOSFET |
|
SSM6K504NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 9A 6UDFNB |
|
IRL3705ZLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO262 |
|
IRF8306MTRPBFRochester Electronics |
MOSFET N-CH 30V 23A DIRECTFET |
|
FDD4N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 3.4A DPAK |