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IPDD60R125G7XTMA1

IPDD60R125G7XTMA1

MOSFET N-CH 600V 20A HDSOP-10

IPDD60R125G7XTMA1

IPDD60R125G7XTMA1

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Part No :

IPDD60R125G7XTMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 20A HDSOP-10
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11608 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 05 - Jan 09 2025
PDF
IPDD60R125G7XTMA1 PDF
Type Description
Series:CoolMOS™ G7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id:4V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 400 V
FET Feature:-
Power Dissipation (Max):120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HDSOP-10-1
Package / Case:10-PowerSOP Module
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