MOSFET P-CH 20V 13A 6UDFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 32mOhm @ 8.9A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 19 nC @ 8 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 834 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.8W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | U-DFN2020-6 (Type F) |
Package / Case: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STL21N65M5STMicroelectronics |
MOSFET N-CH 650V 17A PWRFLAT HV |
|
SI1411DH-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 420MA SOT363 |
|
SPA20N65C3XKSA1Rochester Electronics |
MOSFET N-CH 650V 20.7A TO220-3 |
|
IPP034NE7N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 100A TO220-3 |
|
FCPF600N60ZRochester Electronics |
MOSFET N-CH 600V 7.4A TO220F |
|
STB34NM60NSTMicroelectronics |
MOSFET N-CH 600V 29A D2PAK |
|
IPB100N10S305ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO263-3 |
|
AOUS66414Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 40A/92A ULTRASO8 |
|
NTE2931NTE Electronics, Inc. |
MOSFET N-CH 200V 12.8A TO3PML |
|
IPDD60R125G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20A HDSOP-10 |
|
NTMFS5H400NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 46A/330A 5DFN |
|
IPB22N03S4L15ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 22A TO263-3 |
|
BUK7E2R3-40C,127Rochester Electronics |
MOSFET N-CH 40V 100A I2PAK |