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NTMS3P03R2G

NTMS3P03R2G

MOSFET P-CH 30V 2.34A 8SOIC

NTMS3P03R2G

NTMS3P03R2G

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Part No :

NTMS3P03R2G

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 30V 2.34A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
70044 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 02 - Jan 06 2025
PDF
NTMS3P03R2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 24 V
FET Feature:-
Power Dissipation (Max):730mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
NTMS3P03R2G is available at GangBo-ic.com, Please review product page below for detailed information, including NTMS3P03R2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMS3P03R2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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