MOSFET P-CH 30V 5.5A TSOP-6
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 43mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs: | 29 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 805 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TSOP-6-6 |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOC2421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 8V 2.5A 4ALPHADFN |
|
FDS86240Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 7.5A 8SOIC |
|
TK10A60E,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 10A TO220SIS |
|
MTD20P06HDLRochester Electronics |
P-CHANNEL POWER MOSFET |
|
SIHB17N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 15A D2PAK |
|
IPB80P04P4L08ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO263-3 |
|
SPP15N60C3Rochester Electronics |
MOSFET N-CH 600V 15A TO220-3-1 |
|
FDV305NRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IXFX240N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 240A PLUS247-3 |
|
R6020PNJFRATLROHM Semiconductor |
MOSFET N-CH 600V 20A LPTS |
|
IPD70R900P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6A TO252-3 |
|
NTMS3P03R2GRochester Electronics |
MOSFET P-CH 30V 2.34A 8SOIC |
|
PSMN9R5-100BS,118Nexperia |
MOSFET N-CH 100V 89A D2PAK |