MOSFET N-CH 600V 64A TO264AA
Type | Description |
---|---|
Series: | HiPerFET™, Polar3™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 95mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 145 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 9900 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1130W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-264AA (IXFK) |
Package / Case: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDB8896-F085Rochester Electronics |
19A, 30V, 0.0068OHM, N-CHANNEL, |
|
IRF540ZLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO262 |
|
FDPF55N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 55A TO220F |
|
SI4090DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 19.7A 8SO |
|
FDPF13N50FTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 12A TO220F |
|
FDMS7572SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 23A/49A 8PQFN |
|
STH265N6F6-2AGSTMicroelectronics |
MOSFET N-CH 60V 180A H2PAK-2 |
|
SIHG28N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 28A TO247AC |
|
STP7NK40ZSTMicroelectronics |
MOSFET N-CH 400V 5.4A TO220AB |
|
DMN10H170SFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 2.9A 6UDFN |
|
ZVN2110GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 500MA SOT223 |
|
IRLU014Vishay / Siliconix |
MOSFET N-CH 60V 7.7A TO251AA |
|
PSMN1R6-40YLC,115Rochester Electronics |
MOSFET N-CH 40V 100A LFPAK56 |