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N0412N-S19-AY

N0412N-S19-AY

MOSFET N-CH 40V 100A TO220

N0412N-S19-AY

N0412N-S19-AY

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Part No :

N0412N-S19-AY

Manufacturer
Renesas Electronics America
Description
MOSFET N-CH 40V 100A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
553655 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
PDF
N0412N-S19-AY PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta), 119W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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