MOSFET N-CH 30V 16A 8HSSO
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 59A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.1mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 2.56mA |
Gate Charge (Qg) (Max) @ Vgs: | 17 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2940 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta), 24.6W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | HSSO8-F1-B |
Package / Case: | 8-PowerSMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PSMN3R7-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 97A LFPAK56 |
|
SPD50P03LRochester Electronics |
MOSFET P-CH 30V 50A TO252-5 |
|
IXTH140P10TWickmann / Littelfuse |
MOSFET P-CH 100V 140A TO247 |
|
SPI08N50C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDP038AN06A0-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 80A TO220-3 |
|
SUM80090E-GE3Vishay / Siliconix |
MOSFET N-CH 150V 128A D2PAK |
|
STW3N170STMicroelectronics |
MOSFET N-CH 1700V 2.6A TO247-3 |
|
AUIRLR3105Rochester Electronics |
MOSFET N-CH 55V 25A DPAK |
|
NTMFS4927NCT1GRochester Electronics |
MOSFET N-CH 30V 7.9A/38A 5DFN |
|
APT10045JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 21A ISOTOP |
|
NVMFS5C426NWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/235A 5DFN |
|
SSM3K44FS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA SSM |
|
SPU18P06PRochester Electronics |
MOSFET P-CH 60V 18.6A TO251-3 |