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STW3N170

STW3N170

MOSFET N-CH 1700V 2.6A TO247-3

STW3N170

STW3N170

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Part No :

STW3N170

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 1700V 2.6A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10640 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
Type Description
Series:PowerMESH™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:-
Power Dissipation (Max):160mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
STW3N170 is available at GangBo-ic.com, Please review product page below for detailed information, including STW3N170 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STW3N170 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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