MOSFET P-CH 60V 36A TO252
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 30mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 52 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3200 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.2W (Ta), 56W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252 (MP-3ZK) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI7615BDN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 29A/104A PPAK |
|
FQP12N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 12A TO220-3 |
|
STU12N60M2STMicroelectronics |
MOSFET N-CH 600V 9A IPAK |
|
STL10N3LLH5STMicroelectronics |
MOSFET N-CH 30V 9A POWERFLAT |
|
SSM3K72KFS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 300MA SSM |
|
IPB90N06S4L04ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO263-3 |
|
FQB16N15TMRochester Electronics |
MOSFET N-CH 150V 16.4A D2PAK |
|
SIS862DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 40A PPAK1212-8 |
|
2N7002T-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 115MA SOT523 |
|
TSM950N10CW RPGTSC (Taiwan Semiconductor) |
MOSFET N-CH 100V 6.5A SOT223 |
|
SK8403170LPanasonic |
MOSFET N-CH 30V 16A 8HSSO |
|
PSMN3R7-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 97A LFPAK56 |
|
SPD50P03LRochester Electronics |
MOSFET P-CH 30V 50A TO252-5 |