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SIR120DP-T1-RE3

SIR120DP-T1-RE3

MOSFET N-CH 80V 24.7A/106A PPAK

SIR120DP-T1-RE3

SIR120DP-T1-RE3

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Part No :

SIR120DP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 80V 24.7A/106A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16695 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 03 - Feb 07 2025
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:24.7A (Ta), 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:3.55mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4150 pF @ 40 V
FET Feature:-
Power Dissipation (Max):5.4W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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