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SPP35N10

SPP35N10

MOSFET N-CH 100V 35A TO220-3

SPP35N10

SPP35N10

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Part No :

SPP35N10

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 35A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
34468 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 03 - Feb 07 2025
PDF
SPP35N10 PDF
Type Description
Series:SIPMOS®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id:4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.57 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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