MOSFET N-CH 40V 33A/100A TDSON
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 85 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6020 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 3W (Ta), 115W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 FL |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STD5NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 5A DPAK |
|
IPD70N12S3-11Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SCT3105KRC14ROHM Semiconductor |
SICFET N-CH 1200V 24A TO247-4L |
|
TP86R203NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 19A 8SOP |
|
HUF76121P3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIR120DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 80V 24.7A/106A PPAK |
|
IRFW610BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AONS62614TAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 39A/100A 8DFN |
|
PSMN0R9-30ULDXNexperia |
MOSFET N-CH 30V 300A LFPAK56 |
|
FDD6N25TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 4.4A DPAK |
|
IPW90R800C3FKSA1Rochester Electronics |
MOSFET N-CH 900V 6.9A TO247-3 |
|
IRF820PBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 2.5A TO220AB |
|
IXFH26N60PWickmann / Littelfuse |
MOSFET N-CH 600V 26A TO247AD |