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SPP08P06PHXKSA1

SPP08P06PHXKSA1

8.8A, 60V, 0.3OHM, P-CHANNEL, M

SPP08P06PHXKSA1

SPP08P06PHXKSA1

Image is for reference, please contact us to get the real picture

Part No :

SPP08P06PHXKSA1

Manufacturer
Rochester Electronics
Description
8.8A, 60V, 0.3OHM, P-CHANNEL, M
Catalog
Transistors - FETs, MOSFETs - Single
Availability
343434 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SPP08P06PHXKSA1 PDF
Type Description
Series:SIPMOS®
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 25 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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