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TK65E10N1,S1X

TK65E10N1,S1X

MOSFET N CH 100V 148A TO220

TK65E10N1,S1X

TK65E10N1,S1X

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Part No :

TK65E10N1,S1X

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N CH 100V 148A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10977 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
TK65E10N1,S1X PDF
Type Description
Series:U-MOSVIII-H
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:148A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5400 pF @ 50 V
FET Feature:-
Power Dissipation (Max):192W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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