MOSFET N-CH 500V 3.1A TO251-3
4 1/2" W. POLYIMIDE MASKING TAPE
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 13V |
Rds On (Max) @ Id, Vgs: | 1.4Ohm @ 900mA, 13V |
Vgs(th) (Max) @ Id: | 3.5V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.2 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 178 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
HUF75842S3STRochester Electronics |
MOSFET N-CH 150V 43A D2PAK |
![]() |
NTMSD3P102R2SGRochester Electronics |
MOSFET P-CH 20V 2.34A 8SOIC |
![]() |
BUK965R4-40E,118Nexperia |
MOSFET N-CH 40V 75A D2PAK |
![]() |
IPB80N06S207ATMA1Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
![]() |
SI6423ADQ-T1-GE3Vishay / Siliconix |
MOSFET PCH 20V 10.3/12.5A 8TSSOP |
![]() |
IPP06N03LARochester Electronics |
MOSFET N-CH 25V 50A TO220-3 |
![]() |
2SK3820-ERochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
NTLUS020N03CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5.3A 6UDFN |
![]() |
IRFB3207ZGPBFRochester Electronics |
MOSFET N-CH 75V 120A TO220AB |
![]() |
SIHF540STRL-GE3Vishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
![]() |
STD3NK50Z-1STMicroelectronics |
MOSFET N-CH 500V 2.3A IPAK |
![]() |
R6035ENZ1C9ROHM Semiconductor |
MOSFET N-CH 600V 35A TO247 |
![]() |
SQJA72EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 37A PPAK SO-8 |