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FDB0260N1007L

FDB0260N1007L

MOSFET N-CH 100V 200A TO263-7

FDB0260N1007L

FDB0260N1007L

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Part No :

FDB0260N1007L

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 200A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11232 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
FDB0260N1007L PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:118 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8.545 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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