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IRFI4229PBF

IRFI4229PBF

MOSFET N-CH 250V 19A TO220AB

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IRFI4229PBF

IRFI4229PBF

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Part No :

IRFI4229PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 250V 19A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10930 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
IRFI4229PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:46mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4480 pF @ 25 V
FET Feature:-
Power Dissipation (Max):46W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRFI4229PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFI4229PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFI4229PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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