FIXED IND 22NH 310MA 300 MOHM
MOSFET N-CH 250V 19A TO220AB
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250 V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 46mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 110 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4480 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 46W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVMFS5C673NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 60V 50A 5DFN |
|
NDTL01N60ZT1GRochester Electronics |
MOSFET N-CH 600V 250MA SOT223 |
|
BUK9M12-60EXNexperia |
MOSFET N-CH 60V 54A LFPAK33 |
|
AUIRLR2703Rochester Electronics |
MOSFET N-CH 30V 20A DPAK |
|
NDBA170N06AT4HRochester Electronics |
MOSFET N-CH 60V 170A D2PAK |
|
FDB2710Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 50A D2PAK |
|
BSC042N03LSGRochester Electronics |
BSC042N03 - 12V-300V N-CHANNEL P |
|
FQT1N80TF-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 200MA SOT223-3 |
|
NDS352PRochester Electronics |
MOSFET P-CH 20V 850MA SUPERSOT3 |
|
QS5U17TRROHM Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
|
TPH1R712MD,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 60A 8SOP |
|
EMH1405-P-TL-HRochester Electronics |
MOSFET N-CH 30V 8.5A EMH8 |
|
BUK9E4R9-60E,127Rochester Electronics |
MOSFET N-CH 60V 100A I2PAK |