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IRL80HS120

IRL80HS120

Image is for reference, please contact us to get the real picture

Part No :

IRL80HS120

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 12.5A 6PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13504 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
IRL80HS120 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:32mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 25 V
FET Feature:-
Power Dissipation (Max):11.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-PQFN (2x2)
Package / Case:6-VDFN Exposed Pad
IRL80HS120 is available at GangBo-ic.com, Please review product page below for detailed information, including IRL80HS120 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRL80HS120 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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