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IPT007N06NATMA1

IPT007N06NATMA1

MOSFET N-CH 60V 300A 8HSOF

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IPT007N06NATMA1

IPT007N06NATMA1

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Part No :

IPT007N06NATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 300A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
243224 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPT007N06NATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:0.75mOhm @ 150A, 10V
Vgs(th) (Max) @ Id:3.3V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:287 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16000 pF @ 30 V
FET Feature:-
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
IPT007N06NATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPT007N06NATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPT007N06NATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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