







MEMS OSC XO 8.1920MHZ LVCM LVTTL
XTAL OSC VCXO 644.53125MHZ
XTAL OSC VCXO 224.0000MHZ LVPECL
MOSFET P-CH 30V 4.1A SOT23-6L
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30 V |
| Current - Continuous Drain (Id) @ 25°C: | 4.1A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 60mOhm @ 4.1A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 700 pF @ 15 V |
| FET Feature: | - |
| Power Dissipation (Max): | 350mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23-6L |
| Package / Case: | SOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
IRLR8743PBFRochester Electronics |
IRLR8743 - HEXFET POWER MOSFET |
|
|
IPI034NE7N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FCPF2250N80ZRochester Electronics |
MOSFET N-CH 800V 2.6A TO220F |
|
|
RSD050N10TLROHM Semiconductor |
MOSFET N-CH 100V 5A CPT3 |
|
|
IXTX170P10PWickmann / Littelfuse |
MOSFET P-CH 100V 170A PLUS247-3 |
|
|
BSZ099N06LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 46A TSDSON |
|
|
APT1201R6SVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 8A D3PAK |
|
|
SIHA15N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 15A TO220 |
|
|
IXTT170N10PWickmann / Littelfuse |
MOSFET N-CH 100V 170A TO268 |
|
|
FDD86367-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 100A DPAK |
|
|
TSM80N950CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 6A ITO220AB |
|
|
IRLD024PBFVishay / Siliconix |
MOSFET N-CH 60V 2.5A 4DIP |
|
|
FQB2P25TMRochester Electronics |
MOSFET P-CH 250V 2.3A D2PAK |