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IRFB11N50APBF

IRFB11N50APBF

MOSFET N-CH 500V 11A TO220AB

IRFB11N50APBF

IRFB11N50APBF

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Part No :

IRFB11N50APBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 500V 11A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10972 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 05 - Feb 09 2025
PDF
IRFB11N50APBF PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1423 pF @ 25 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRFB11N50APBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFB11N50APBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFB11N50APBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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