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FQI17N08TU

FQI17N08TU

MOSFET N-CH 80V 16.5A I2PAK

FQI17N08TU

FQI17N08TU

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Part No :

FQI17N08TU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 80V 16.5A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11354 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 04 - Feb 08 2025
PDF
FQI17N08TU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:115mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FQI17N08TU is available at GangBo-ic.com, Please review product page below for detailed information, including FQI17N08TU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI17N08TU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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