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IPP048N12N3GXKSA1

IPP048N12N3GXKSA1

MOSFET N-CH 120V 100A TO220-3

0818920

0818920

TERM BLOCK MARKER ORANGE

IPP048N12N3GXKSA1

IPP048N12N3GXKSA1

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Part No :

IPP048N12N3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 120V 100A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11203 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
IPP048N12N3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:182 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12000 pF @ 60 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
IPP048N12N3GXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP048N12N3GXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP048N12N3GXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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