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IRLR8259PBF

IRLR8259PBF

HEXFET POWER MOSFET

IRLR8259PBF

IRLR8259PBF

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Part No :

IRLR8259PBF

Manufacturer
Rochester Electronics
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
263126 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 04 - Feb 08 2025
PDF
IRLR8259PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 13 V
FET Feature:-
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR8259PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRLR8259PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLR8259PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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