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BSC900N20NS3GATMA1

BSC900N20NS3GATMA1

MOSFET N-CH 200V 15.2A TDSON-8

BSC900N20NS3GATMA1

BSC900N20NS3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC900N20NS3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 15.2A TDSON-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
20193 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
BSC900N20NS3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:15.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id:4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:11.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 100 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8
Package / Case:8-PowerTDFN
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